hg0088备用网址教授

发布时间:2018-09-23编辑:admin阅读(0)


    姓名:hg0088备用网址       性欲:男子bear的过去分词年: 1959年

    学衔:小阳春/指点

    地址:姓校区最高级物质大厦205联系电话:65642642    Email:zhangqun@

    简历(教育学镶嵌)

    1982复旦中学身体的系电子身体的聪颖勤奋的学生
    1992 日本东京技术中学电子身体的专业硕士学位
    1995 日本东京技术中学电子身体的专业博士学位
    1995 日本公营北陆倾斜科学认识技术大全体教职员中学导师
    1998- 复旦中学钱科学认识术部门副小阳春,小阳春


    课题面貌(包含教跑过)

    薄膜身体的与技术;明确电子学应用;氧化物质薄膜晶体管;氧化物质贮藏与传感钱

    讲授跑过:

    毫微米体系的检测与表征; 电子身体的试验;明确电子学应用;钱科学认识与社会

    学术供职


    中国1971真空区学会落实理事;中国1971真空区学会副秘书长; 《无生物的钱期刊》、《真空区期刊》与《真空区科学认识与技术》期刊编纂佣金

    晚近的代表论文

        中外学术期刊APL, JAP, JJAP, JMR, JVSTA, Thin Solid Films和真空区科学认识与技术等颁发论文七十多篇,状况发明专利品8项,实用新型专利品2项,4项专利品受权。SCI科学论文近五年颁发:

    1.Yu Chang, Zhao Yang, Haifeng Pu, Can Cui, Li 湛g, Chengyuan Dong, and Qun 湛g*, Solution-Processed Indium-Zinc-Oxide Thin-Flim Transistors with High-k Magnesium-Titanium Oxide Dielectric, IEEE ELECTRON DEVICE LETTERS, 2014, 35(5): 557-559

    2.Lan Yue, HaiFeng Pu, HongLei Li, ShuJian Pang and Qun 湛g*, 浸涂 Al-In-Zn-O thin-film transistor with poly- methylmethacrylate gate dielectric, J. Phys. D: Appl. Phys. 46 (2013) 445106 (5pp)

    3.Honglei Li, Mingyue Qu, and Qun 湛g*, Influence of Tungsten Doping on the Performance of Indium Zinc Oxide Thin Film Transistors, IEEE ELECTRON DEVICE LETTERS,2013, 34(10): 1268-1270

    4.Haifeng Pu, Honglei Li, Zhao Yang, Qianfei Zhou, Chengyuan Dong, and Qun 湛g*, Effect of Content Ratio on Solution-Processed High-k 钛铝化合物 Oxide Dielectric Films, ECS Solid State Letters, 2013, 2 (10): N35-N38.

    5.Haifeng Pu, Qianfei Zhou, Lan Yue, Qun 湛g*, Investigation of oxygen plasma treatment on the device 功能 solution-processed 阿伊格佐 thin film transistors, Applied Surface Science, 2013, 283: 722 – 726.

    6.Haifeng Pu, Qianfei Zhou, Lan Yue and Qun 湛g*, Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing, Semicond. SCI。 技术专家 28 (2013) 105002

    7.Lan Yue, Hai-Feng Pu, Hong-Lei Li, Shu-Jian Pang, Qun 湛g*, Effect of active layer thickness on device performance of a-LZTO thin-film transistors, Superlattices and Microstructures, 2013, 57: 123-128

    8.燕威 Huang*, Qun 湛g, 俊华 Xi, Zhenguo Ji, Transparent conductive p-type 锂掺杂 nickel oxide thin films deposited by pulsed plasma deposition, Applied Surface Science, 2012, 258: 7435-7439

    9.Runlai Wan, Ming Yang, Qianfei Zhou, and Qun 湛g*, Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition,. J. Vac. SCI。 技术专家 A, 2012, 30(6), 061508-1-5

    10.Ming Yang, Haifeng Pu, Qianfei Zhou, Qun 湛g*, Transparent p-type conducting K-doped NiO films deposited by pulsed plasma deposition, Thin Solid Films, 2012, 520, 5884-5888

    11.Lan Yue, Haifeng Pu, Shujian Pang, Honglei Li and Qun 湛g*, 顶铸道 LZTO thin-film transistors with PMMA gate insulator by solution process, EPL, 97 (2012) 67006

    12.Yao Qijun 1,2, Li Shuxin1 and 湛g Qun2, Study of Ti Addition in Channel Layers for In-Zn-O Thin Film Transistors, Applied Surface Science, 2011, 258: 1460-1463

    13.Haifeng Pu, Guifeng Li, Jiahan Feng, Baoying Liu and Qun 湛g*, Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers, Semicond. SCI。 Technol. 26 (2011) 095004

    14.Qijun Yao, Shuxin Liand Qun 湛g*, Influences of channel metallic composition on indium zinc oxide thin-film transistor performance, Semicond. SCI。 Technol. 26 (2011) 085011

    15.Ming Yang, 湛 Shi, Jiahan Feng, Haifeng Pu, Guifeng Li, Jun Zhou, Qun 湛g*, Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition, Thin Solid Films, 2011, 519: 30213025

    16.G.F. Li, J. Zhou, Y.W. Huang, M. Yang, J.H. Feng and Q. 湛g*, Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature, Vacuum, 2010, 85: 22-25

    17.燕威 Huang, Dezeng Li, Jiahan Feng, Guifeng Li and Qun 湛g*, Transparent conductive tungsten-doped tin oxide thin films synthesized by sol–gel technique on quartz glass substrates”, J Sol-Gel Sci Technol., (2010) 54: 276–281

    18.燕威 Huang, Guifeng Li, Jiahan Feng, Qun 湛g, “Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films”, Thin Solid Films, 2010, 518: 1892-1896